Display apparatus having an oxide semiconductor pattern

ABSTRACT

A display apparatus in which a thin film transistor of each pixel region includes an oxide semiconductor pattern is provided. The pixel regions can be disposed on a display area of a device substrate. The display area can be electrically connected to the gate driver by gate lines. An encapsulating element can be disposed on the thin film transistor of each pixel region. The encapsulating element can extend beyond the display area. The gate lines can overlap the encapsulating element. A barrier line can be disposed between the gate lines and the encapsulating element. The barrier line can include a hydrogen barrier material. Thus, in the display apparatus, the characteristics deterioration of the thin film transistor due to the encapsulating element can be prevented or minimized.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the priority benefit of Korean PatentApplication No. 10-2019-0180187, filed on Dec. 31, 2019 in the Republicof Korea, the entire contents of which are hereby expressly incorporatedby reference as if fully set forth herein into the present application.

BACKGROUND OF THE INVENTION Field of the Invention

The present disclosure relates to a display apparatus in which athin-film transistor of each pixel region includes an oxidesemiconductor pattern.

Discussion of the Related Art

In general, an electronic appliance such as a monitor, a TV, a laptopcomputer, and a digital camera includes a display apparatus to realizean image. For example, the display apparatus can include alight-emitting device. The light-emitting device can emit lightdisplaying a specific color. For example, the light-emitting device caninclude a light-emitting layer disposed between a first electrode and asecond electrode.

The display apparatus can include a driving circuit electricallyconnected to the light-emitting device, and an encapsulating elementcovering the driving circuit and the light-emitting device. The drivingcircuit can provide a driving current corresponding to a data signal tothe light-emitting device according to a gate signal. For example, thedriving circuit can include at least one thin-film transistor.

The thin-film transistor can include an oxide semiconductor to preventdefects due to leakage current. The encapsulating element can preventdamage of the light-emitting device due to an external impact andmoisture. For example, the encapsulating element can have a structure inwhich an inorganic insulating layer and an organic insulating layer arestacked.

The gate signal can be transmitted through a gate line. A gate drivergenerating the gate signal can be disposed outside a display area inwhich the driving circuit and the light-emitting device are disposed.However, in the display apparatus, hydrogen diffused from theencapsulating element can move through the gate line and thus hydrogencan inflow to the driving circuit through the gate line. Therefore, inthe display apparatus, the oxide semiconductor pattern can bedeteriorated by hydrogen, and the characteristics of the thin-filmtransistor can be affected.

SUMMARY OF THE INVENTION

Accordingly, the present invention is directed to a display apparatusthat substantially obviates one or more problems due to limitations anddisadvantages of the related art.

An object of the present disclosure is to provide a display apparatuscapable of preventing the inflow of hydrogen through gate lines.

Another object of the present disclosure is to provide a displayapparatus capable of preventing the gate line and/or the data lineconnected to a driving circuit of each pixel region from serving as apath of inflowing hydrogen.

Additional advantages, objects, and features of the invention will beset forth in part in the description which follows and in part willbecome apparent to those having ordinary skill in the art uponexamination of the following or can be learned from practice of theinvention. The objectives and other advantages of the invention can berealized and attained by the structure particularly pointed out in thewritten description and claims hereof as well as the appended drawings.

To achieve these objects and other advantages and in accordance with thepurpose of the invention, as embodied and broadly described herein,there is provided a display apparatus comprising pixel regions. Each ofthe pixel regions includes a driving circuit and a light-emittingdevice. The driving circuit includes an oxide semiconductor pattern. Thelight-emitting device is connected to the driving circuit. A gate driveris disposed outside the pixel regions. The gate driver is connected tothe pixel regions by gate lines. An encapsulating element is disposed onthe pixel regions. The encapsulating element overlaps the gate lines. Afirst barrier line is disposed between the gate lines and theencapsulating element. The first barrier line intersects the gate lines.The first barrier line includes a hydrogen barrier material.

The hydrogen barrier material can include titanium (Ti).

A pad region can be disposed outside the pixel regions. The pad regioncan be connected to the pixel regions by data lines. The data lines caninclude the same material as the first barrier line.

The first barrier line can be spaced away from the data lines.

A second barrier line can be disposed between the first barrier line andthe gate driver. The second barrier line can extend side by side withthe first barrier line.

The first barrier line can be connected to the pad region.

The driving circuit can include a gate electrode overlapping with achannel region of the oxide semiconductor pattern, a gate insulatinglayer disposed between the oxide semiconductor pattern and the gateelectrode, a source electrode connected to a source region of the oxidesemiconductor pattern, and a drain electrode connected to a drain regionof the oxide semiconductor pattern. The source electrode and the drainelectrode can be disposed on the same layer as the first barrier line.

In another embodiment, a display apparatus includes a device substrate.The device substrate includes a display area and a non-display area. Thenon-display area is disposed outside the display area. A gate driver isdisposed on the non-display area of the device substrate. The gatedriver is connected to the display area by gate lines. A barrier lineintersects the gate lines. The barrier line includes a hydrogen barriermaterial. An encapsulating element is disposed on the display area ofthe device substrate. The encapsulating element extends on the gatelines. The gate lines are disposed between the device substrate and thebarrier line.

Driving circuits can be disposed on the display area of the devicesubstrate. Each of the driving circuits can include a thin filmtransistor. The thin film transistor can be connected to one of the gatelines. The thin film transistor can include an oxide semiconductorpattern.

A pad region can be disposed in the non-display are of the devicesubstrate. The pad region can be connected to the display area by datalines. Each of the date lines can include a portion disposed between thedevice substrate and the barrier line.

A stacked structure of the data lines can be different from a stackedstructure of the barrier line.

The barrier line can have a closed loop shape extending along an edge ofthe display area.

The barrier line can include a first region and a second region. Thefirst region can have a first width. The second region can have a secondwidth larger than the first width. A corner of the display area can havea round shape. The second region of the barrier line can correspond tothe corner of the display area.

A distance between the barrier line and the display area can beconstant.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this application, illustrate embodiment(s) of the invention andtogether with the description serve to explain the principle of theinvention. In the drawings:

FIG. 1 is a view schematically showing a display apparatus according toan embodiment of the present invention;

FIG. 2A is a view showing cross-sections taken along line I-I′ and lineII-II′ of FIG. 1 ;

FIG. 2B is a view showing cross-sections taken along line III-III′ andline IV-IV′ of FIG. 1 ;

FIG. 3 is a view showing a display apparatus according to anotherembodiment of the present invention;

FIG. 4A is a view showing cross-sections taken along line V-V′ and lineVI-VI′ of FIG. 3 ;

FIG. 4B is a view showing cross-sections taken along line VII-VII′ andline VIII-VIII′ of FIG. 3 ;

FIGS. 5 to 7 are views respectively showing a display apparatusaccording to another embodiment of the present invention; and

FIGS. 8 and 9 are enlarged views of K region in FIG. 7 .

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, details related to the above objects, technicalconfigurations, and operational effects of the embodiments of thepresent invention will be clearly understood by the following detaileddescription with reference to the drawings, which illustrate someembodiments of the present invention. Here, the embodiments of thepresent invention are provided in order to allow the technical sprit ofthe present invention to be satisfactorily transferred to those skilledin the art, and thus the present invention can be embodied in otherforms and is not limited to the embodiments described below.

In addition, the same or extremely similar elements can be designated bythe same reference numerals throughout the specification, and in thedrawings, the lengths and thickness of layers and regions can beexaggerated for convenience. It will be understood that, when a firstelement is referred to as being “on” a second element, although thefirst element can be disposed on the second element so as to come intocontact with the second element, a third element can be interposedbetween the first element and the second element.

Here, terms such as, for example, “first” and “second” can be used todistinguish any one element with another element and may not defineorder. However, the first element and the second element can bearbitrary named according to the convenience of those skilled in the artwithout departing the technical sprit of the present invention.

The terms used in the specification of the present invention are merelyused in order to describe particular embodiments, and are not intendedto limit the scope of the present invention. For example, an elementdescribed in the singular form is intended to include a plurality ofelements unless the context clearly indicates otherwise. In addition, inthe specification of the present invention, it will be furtherunderstood that the terms “comprises” and “includes” specify thepresence of stated features, integers, steps, operations, elements,components, and/or combinations thereof, but do not preclude thepresence or addition of one or more other features, integers, steps,operations, elements, components, and/or combinations.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which example embodiments belong. Itwill be further understood that terms, such as those defined in commonlyused dictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andshould not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

Embodiments

FIG. 1 is a view schematically showing a display apparatus according toan embodiment of the present invention. FIG. 2A is a view showingcross-sections taken along line I-I′ and line II-II′ of FIG. 1 . FIG. 2Bis a view showing cross-sections taken along line III-III′ and lineIV-IV′ of FIG. 1 . All components of the display apparatus according toall embodiments of the present invention are operatively coupled andconfigured.

Referring to FIGS. 1, 2A and 2B, the display apparatus according to theembodiment of the present invention can include a device substrate 100.The device substrate 100 can include an insulating material. Forexample, the device substrate 100 can include glass or plastic.

The device substrate 100 can include a display area AA and a non-displayarea NA. The display area AA can realize an image provided to a user.For example, pixel regions PA can be disposed in the display area AA.Each of the pixel regions PA can realize a specific color. For example,each of the pixel regions PA can include a driving circuit D and alight-emitting device 300.

The driving circuit D can generate a driving current corresponding to adata signal according to a gate signal. For example, the driving circuitD can include a first thin film transistor 210, a second thin filmtransistor 220 and a storage capacitor 230.

The first thin film transistor 210 can turn on/off the second thin filmtransistor 220 according to the gate signal. For example, the first thinfilm transistor 210 can include a first semiconductor pattern 211, afirst gate insulating layer 212, a first gate electrode 213, a firstsource electrode 215 and a first drain electrode 216.

The first semiconductor pattern 211 can be an oxide semiconductor. Forexample, the first semiconductor pattern 211 can be an oxidesemiconductor pattern including a metal oxide, such as IGZO. Thus, inthe display apparatus according to the embodiment of the presentinvention, the defects of the first thin film transistor 210 due to aleakage current can be prevented.

The first semiconductor pattern 211 can include a first source region, afirst channel region and a first drain region. The first channel regioncan be disposed between the first source region and the first drainregion. The first source region and the first drain region can havehigher electrical conductivity than the first channel region. Aresistance of the first source region and a resistance of the firstdrain region can be lower than a resistance of the first channel region.For example, the first source region and the first drain region can be aconductorized region.

The first gate insulating layer 212 can be disposed on the firstsemiconductor pattern 211. For example, the first gate insulating layer212 can overlap the first channel region of the first semiconductorpattern 211. The first source region and the first drain region of thefirst semiconductor pattern 211 can be disposed outside the first gateinsulating layer 212. The first gate insulating layer 212 can include aninsulating material. For example, the first gate insulating layer 212can include silicon oxide (SiOx). The first gate insulating layer 212can include a material having a high dielectric constant. For example,the first gate insulating layer 212 can include a High-K material, suchas hafnium oxide (HfO). The first gate insulating layer 212 can have amulti-layer structure.

The first gate electrode 213 can be disposed on the first gateinsulating layer 212. For example, the first gate electrode 213 canoverlap the first channel region of the first semiconductor pattern 211.A side surface of the first gate insulating layer 212 can be verticallyaligned with a side surface of the first gate electrode 213. Forexample, the first gate electrode 213 can be insulated from the firstsemiconductor pattern 211 by the first gate insulating layer 212. Thefirst channel region of the first semiconductor pattern 211 can have anelectrical conductivity corresponding to a voltage applied to the firstgate electrode 213. For example, the first channel region of the firstsemiconductor pattern 211 can be a semiconductor region. The first gateelectrode 213 can include a conductive material. For example, the firstgate electrode 213 can include a metal, such as aluminum (Al), titanium(Ti), chromium (Cr), molybdenum (Mo), tungsten (W) and copper (Cu), oralloys thereof. The first gate electrode 213 can be formed of a singlelayer or multiple layers.

The first source electrode 215 can be electrically connected to thefirst source region of the first semiconductor pattern 211. For example,the first source electrode 215 can be in direct contact with a portionof the first source region. The first source electrode 215 can include aportion overlapping with the first source region. The first sourceelectrode 215 can be insulated from the first gate electrode 213. Forexample, an upper interlayer insulating layer 140 can be disposed on thefirst semiconductor pattern 211 and the first gate electrode 213, andthe first source electrode 215 can be disposed on the upper interlayerinsulating layer 140. The upper interlayer insulating layer 140 caninclude an insulating material. For example, the upper interlayerinsulating layer 140 can include silicon oxide (SiOx) or silicon nitride(SiNx). The upper interlayer insulating layer 140 can extend beyond thefirst semiconductor pattern 211. For example, a side surface of thefirst semiconductor pattern 211 and a side surface of the first gateelectrode 213 can be in direct contact with the upper interlayerinsulating layer 140. The upper interlayer insulating layer 140 caninclude a first source contact hole partially exposing the first sourceregion of the first semiconductor pattern 211. The first sourceelectrode 215 can be connected to the first source region of the firstsemiconductor pattern 211 in the first source contact hole.

Referring to FIG. 2A, the upper interlayer insulating layer 140 isillustrated as a single layer, but is not limited thereto. For example,the upper interlayer insulating layer 140 can have a stacked structureof a layer formed of silicon nitride (SiNx) and a layer formed ofsilicon oxide (SiOx). The upper interlayer insulating layer 140 can be adouble-layer structure of a layer formed of silicon nitride (SiNx) and alayer formed of silicon oxide (SiOx).

The first source electrode 215 can include a conductive material. Forexample, the first source electrode 215 can include a metal, such asaluminum (Al), chromium (Cr), titanium (Ti), molybdenum (Mo), tungsten(W) and copper (Cu), or alloys thereof. The first source electrode 215can have a single layer or multiple layers. The first source electrode215 can include a material different from the first gate electrode 213.

The first drain electrode 216 can be electrically connected to the firstdrain region of the first semiconductor pattern 211. For example, thefirst drain electrode 216 can be in direct contact with a portion of thefirst drain region. The first drain electrode 216 can include a portionoverlapping with the first drain region. The first drain electrode 216can be insulated from the first gate electrode 213. For example, thefirst drain electrode 216 can be disposed on the upper interlayerinsulating layer 140. The first drain electrode 216 can be spaced awayfrom the first source electrode 215. For example, the upper interlayerinsulating layer 140 can include a first drain contact hole partiallyexposing the first drain region. The first drain electrode 216 can beconnected to the first drain region in the first drain contact hole.

The first drain electrode 216 can include a conductive material. Forexample, the first drain electrode 216 can include a metal, such asaluminum (Al), titanium (Ti), chromium (Cr), molybdenum (Mo), tungsten(W) and copper (Cu), or alloys thereof. The first drain electrode 216can have a single layer or multiple layers. The first drain electrode216 can include the same material as the first source electrode 215. Thefirst drain electrode 216 can include a material different from thefirst gate electrode 213.

The second thin film transistor 220 can generate a driving currentcorresponding to the data signal. The second thin film transistor 220can have the same configuration as the first thin film transistor 210.For example, the second thin film transistor 220 can include a secondsemiconductor pattern 221, a second gate electrode 223, a second sourceelectrode 225 and a second drain electrode 226.

The second semiconductor pattern 221 can include a material differentfrom the first semiconductor pattern 211. For example, the secondsemiconductor pattern 221 can include silicon. The second semiconductorpattern 221 can be disposed on a layer different from the firstsemiconductor pattern 211. For example, a lower interlayer insulatinglayer 130 can be disposed between the device substrate 100 and the firstsemiconductor pattern 211, and the second semiconductor pattern 221 canbe disposed between the device substrate 100 and the lower interlayerinsulating layer 130. Thus, in the display apparatus according to theembodiment of the present invention, the first semiconductor pattern 211may not be affected by a process of forming the second semiconductorpattern 221.

Referring to FIG. 2A, the lower interlayer insulating layer 130 isillustrated as a single layer, but is not limited thereto. For example,the lower interlayer insulating layer 130 can have a stacked structurein which a layer formed of silicon nitride (SiNx) and a layer formed ofsilicon oxide (SiOx). The lower interlayer insulating layer 130 can be atriple-layer structure of a first layer formed of silicon nitride(SiNx), a second layer formed of silicon nitride (SiNx), and a thirdlayer formed of silicon oxide (SiOx).

The second semiconductor pattern 221 can have the same configuration asthe first semiconductor pattern 211. For example, the secondsemiconductor pattern 221 can include a second channel region disposedbetween a second source region and a second drain region. The secondsource region and the second drain region can have a lower resistancethan the second channel region. For example, the second source regionand the second drain region have a larger concentration of conductiveimpurities than the second channel region.

The second gate electrode 223 can be disposed on the second channelregion of the second semiconductor pattern 221. For example, the secondsemiconductor pattern 221 can be disposed between the device substrate100 and the second gate electrode 223. The second gate electrode 223 canbe disposed on a layer different from the first gate electrode 213. Forexample, the second gate electrode 223 can be disposed between thesecond semiconductor pattern 221 and the lower interlayer insulatinglayer 130. The second gate electrode 223 can include a conductivematerial. For example, the second gate electrode 223 can include ametal, such as aluminum (Al), titanium (Ti), chromium (Cr), molybdenum(Mo), tungsten (W) and copper (Cu), or alloys thereof. The second gateelectrode 223 can be formed of a single layer or multiple layers. Thesecond gate electrode 223 can include the same material as the firstgate electrode 213.

The second gate electrode 223 can be insulated from the secondsemiconductor pattern 221. For example, a second gate insulating layer120 can be disposed between the second semiconductor pattern 221 and thesecond gate electrode 223. The second gate insulating layer 120 caninclude an insulating material. For example, the second gate insulatinglayer 120 can include silicon oxide (SiOx). The second gate insulatinglayer 120 can include a material having a high dielectric constant. Forexample, the second gate insulating layer 120 can include a High-Kmaterial, such as hafnium oxide (HfO). The second gate insulating layer120 can have a multi-layer structure. For example, a stacked structureof the second gate insulating layer 120 can be the same as a stackedstructure of the first gate insulating layer 212.

The second gate insulating layer 120 can extend beyond the secondsemiconductor pattern 221. For example, a side surface of the secondsemiconductor pattern 221 can be covered by the second gate insulatinglayer 120. The second gate insulating layer 120 can extend between thedevice substrate 100 and the lower interlayer insulating layer 130. Forexample, the second gate insulating layer 120 can include a portionoverlapping with the first semiconductor pattern 211.

The second source electrode 225 can include a conductive material. Forexample, the second source electrode 225 can include a metal, such asaluminum (Al), chromium (Cr), titanium (Ti), molybdenum (Mo), tungsten(W) and copper (Cu), or alloys thereof. The second source electrode 225can have a single layer or multiple layers. The second source electrode225 can include a material different from the second gate electrode 223.The second source electrode 225 can be connected to the first drainelectrode 216. Alternatively, as shown in FIG. 1 , the second sourceelectrode 225 can be connected to a line applying a positive powervoltage VDD. The second source electrode 225 can be disposed on the samelayer as the first drain electrode 216. For example, the second sourceelectrode 225 can be disposed on the upper interlayer insulating layer140. The second source electrode 225 can include the same material asthe first drain electrode 216. For example, the second source electrode225 can be in direct contact with the first drain electrode 216.

The second source electrode 225 can be electrically connected to thesecond source region of the second semiconductor pattern 221. Forexample, the second source electrode 225 can be in direct contact with aportion of the second source region. The second source electrode 225 caninclude a portion overlapping with the second source region. The secondgate insulating layer 120, the lower interlayer insulating layer 130 andthe upper interlayer insulating layer 140 can include a second sourcecontact hole partially exposing the second source region of the secondsemiconductor pattern 221. The second source electrode 225 can beconnected to the second source region of the second semiconductorpattern 221 in the second source contact hole.

The second drain electrode 226 can include a conductive material. Forexample, the second drain electrode 226 can include a metal, such asaluminum (Al), chromium (Cr), titanium (Ti), molybdenum (Mo), tungsten(W) and copper (Cu), or alloys thereof. The second drain electrode 226can have a single layer or multiple layers. The second drain electrode226 can include a material different from the second gate electrode 223.The second drain electrode 226 can include the same material as thesecond source electrode 225. The second drain electrode 226 can bedisposed on the same layer as the second source electrode 225. Forexample, the second drain electrode 226 can be disposed on the upperinterlayer insulating layer 140.

The second drain electrode 226 can be electrically connected to thesecond drain region of the second semiconductor pattern 221. Forexample, the second drain electrode 226 can be in direct contact with aportion of the second drain region. The second drain electrode 226 caninclude a portion overlapping with the second drain region. The seconddrain electrode 226 can be spaced away from the second source electrode225. The second gate insulating layer 120, the lower interlayerinsulating layer 130 and the upper interlayer insulating layer 140 caninclude a second drain contact hole partially exposing the second drainregion of the second semiconductor pattern 221. The second drainelectrode 226 can be connected to the second drain region of the secondsemiconductor pattern 221 in the second drain contact hole.

The storage capacitor 230 can maintain the operation of the second thinfilm transistor 220 for one frame. For example, the storage capacitor230 can include a first capacitor electrode 231 connected to the secondgate electrode 223 of the second thin film transistor 220, and a secondcapacitor electrode 232 connected to the second drain electrode 226 ofthe second thin film transistor 220. The first capacitor electrode 231and the second capacitor electrode 232 can be formed by a process offorming the second thin film transistor 220. For example, the firstcapacitor electrode 231 can include the same material as the secondsemiconductor pattern 221, and the second capacitor electrode 232 caninclude the same material as the second gate electrode 223. The secondgate insulating layer 120 can be disposed between the first capacitorelectrode 231 and the second capacitor electrode 232. The secondcapacitor electrode 232 can include a portion overlapping with the firstcapacitor electrode 231.

A buffer layer 110 can be disposed between the device substrate 100 andthe driving circuit D. The buffer layer 110 can prevent pollution fromthe device substrate 100 during the process of forming the drivingcircuit D. The buffer layer 110 can include an insulating material. Forexample, the buffer layer 110 can include silicon oxide (SiOx) and/orsilicon nitride (SiNx). The buffer layer 110 can have a multi-layerstructure. For example, the buffer layer 110 can have a structure inwhich an insulating layer formed of silicon oxide (SiOx) and aninsulating layer formed of silicon nitride (SiNx) are stacked.

An over-coat layer 150 can be disposed on the driving circuit D. Theover-coat layer 150 can remove a thickness difference due to the drivingcircuit D. For example, a surface of the over-coat layer 150 opposite tothe device substrate 100 can be a flat surface. A thickness differencedue to the first thin film transistor 210, the second thin filmtransistor 220 and the storage capacitor 230 can be removed by theover-coat layer 150. The over-coat layer 150 can include an insulatingmaterial. The over-coat layer 150 can include a material havingrelatively high fluidity. For example, the over-coat layer 150 caninclude an organic material.

The light-emitting device 300 can be disposed on the over-coat layer150. The light-emitting device 300 can emit light displaying a specificcolor. For example, the light-emitting device 300 can include a firstelectrode 310, a light-emitting layer 320 and a second electrode 330,which are sequentially stacked on the over-coat layer 150. Thelight-emitting device 300 can be electrically connected to the drivingcircuit D. For example, the first electrode 310 can be connected to thesecond drain electrode 226 of the second thin film transistor 220. Thefirst electrode 310 can include a portion overlapping with the seconddrain electrode 226. For example, the over-coat layer 150 can include anelectrode contact hole partially exposing the second drain electrode226. The first electrode 310 can be in direct contact with the seconddrain electrode 226 in the electrode contact hole. Thus, in the displayapparatus according to the embodiment of the present invention, thelight-emitting device 300 of each pixel region PA can emit light havinga luminance corresponding to the driving current which is generated bythe driving circuit D of the corresponding pixel region PA.

The first electrode 310 can include a conductive material. The firstelectrode 310 can include a material having relatively high reflectance.For example, the first electrode 310 can include a metal, such asaluminum (Al) and silver (Ag). The first electrode 310 can have amulti-layer structure. For example, the first electrode 310 can have astructure in which a reflective electrode formed of a metal is disposedbetween transparent electrodes formed of a transparent conductivematerial, such as ITO and IZO.

The light-emitting layer 320 can generate light having luminancecorresponding to a voltage difference between the first electrode 310and the second electrode 330. For example, the light-emitting layer 320can be an emission material layer (EML) including an emission material.The emission material can include an organic material, an inorganicmaterial or a hybrid material. For example, the display apparatusaccording to the embodiment of the present invention can be an organiclight-emitting display apparatus including a light-emitting layer 320formed of an organic material.

The second electrode 330 can include a conductive material. The secondelectrode 330 can include a material different from the first electrode310. For example, the second electrode 330 can be a transparentelectrode formed of a transparent conductive material, such as ITO andIZO. Thus, in the display apparatus according to the embodiment of thepresent invention, the light generated by the light-emitting layer 320can be emitted outside through the second electrode 330.

The light-emitting device 300 can further include an emitting functionlayer between the first electrode 310 and the light-emitting layer 320,and/or between the light-emitting layer 320 and the second electrode330. The emitting function layer can include at least one of a holeinjection layer (HIL), a hole transporting layer (HTL), an electrontransporting layer (ETL), and an electron injection layer (EIL). Thus,in the display apparatus according to the embodiment of the presentinvention, the emission efficiency of the light-emitting device 300 canbe improved.

An encapsulating element 400 can be disposed on the light-emittingdevice 300. The encapsulating element 400 can prevent damage of thelight-emitting device 300 due to the external moisture and impact. Forexample, the encapsulating element 400 can completely cover the secondelectrode 330 of the light-emitting device 300. The encapsulatingelement 400 can extend beyond the second electrode 330.

The encapsulating element 400 can have a multi-layer structure. Forexample, the encapsulating element 400 can include a first encapsulatinglayer 410, a second encapsulating layer 420 and a third encapsulatinglayer 430, which are sequentially stacked on the second electrode 330.The first encapsulating layer 410, the second encapsulating layer 420and the third encapsulating layer 430 can include an insulatingmaterial. The second encapsulating layer 420 can include a materialdifferent from the first encapsulating layer 410 and the thirdencapsulating layer 430. For example, the first encapsulating layer 410and the third encapsulating layer 430 can include an inorganic material,and the second encapsulating layer 420 can include an organic material.Thus, in the display apparatus according to the embodiment of thepresent invention, the damage of the light-emitting device 300 due tothe external moisture and impact can be effectively prevented. Athickness difference due to the light-emitting device 300 can be removedby the second encapsulating layer 420. For example, a surface of theencapsulating element 400 opposite to the device substrate 100 can beparallel with a surface of the device substrate 100.

The light-emitting device 300 of each pixel region PA can be controlledindependently from the light-emitting device 300 of adjacent pixelregion PA. For example, the first electrode 310 of each light-emittingdevice 300 can be insulated from the first electrode 310 of adjacentlight-emitting device 300. For example, the first electrode 310 of eachlight-emitting device 300 can be spaced away from the first electrode310 of adjacent light-emitting device 300. A bank insulating layer 160can be disposed in a space between adjacent first electrodes 310. Thebank insulating layer 160 can include an insulating material. Forexample, the bank insulating layer 160 can include an organic insulatingmaterial. The bank insulating layer 160 can be in contact with theover-coat layer 150 between adjacent first electrodes 310. The bankinsulating layer 160 can include a material different from the over-coatlayer 150. The bank insulating layer 160 can cover an edge of each firstelectrode 310. For example, the light-emitting layer 320 and the secondelectrode 330 of each light-emitting device 300 can be stacked on aportion of the corresponding first electrode 310 exposed by the bankinsulating layer 160.

The light-emitting device 300 of each pixel region PA can realize acolor different from the light-emitting device 300 of adjacent pixelregion PA. For example, the light-emitting layer 320 of eachlight-emitting device 300 can include a material different from thelight-emitting layer 320 of adjacent light-emitting device 300. Thelight-emitting layer 320 of each light-emitting device 300 can be spacedaway from the light-emitting layer 320 of adjacent light-emitting device300. For example, the light-emitting layer 320 of each light-emittingdevice 300 can include an end on the bank insulating layer 160.

The light-emitting layer 320 of each light-emitting device 300 can beformed by a deposition process using a fine metal mask (FMM). Forexample, a spacer 170 can be disposed on the bank insulating layer 160.The spacer 170 can prevent the damage of adjacent light-emitting layer320 and/or the bank insulating layer 160 due to the fine metal mask.Each of the light-emitting layers 320 can be spaced away from the spacer170. For example, the end of each light-emitting layer 320 can bedisposed on a surface of the bank insulating layer 160 which is disposedoutside the spacer 170. The spacer 170 can include an insulatingmaterial.

A voltage applied to the second electrode 330 of each light-emittingdevice 300 can be the same as a voltage applied to the second electrode330 of adjacent light-emitting device 300. For example, the secondelectrode 330 of each light-emitting device 300 can be electricallyconnected to the second electrode 330 of adjacent light-emitting device300. The second electrode 330 of each light-emitting device 300 caninclude the same material as the second electrode 330 of adjacentlight-emitting device 300. The second electrode 330 of eachlight-emitting device 300 can be in contact with the second electrode330 of adjacent light-emitting device 300. For example, the secondelectrode 330 of each light-emitting device 300 can extend onto the bankinsulating layer 160 and the spacer 170, such that the bank insulatinglayer 160 and the spacer 170 can be covered by the second electrode 330.

A stacked structure of each light-emitting device 300 can have the sameas a stacked structure of adjacent light-emitting device 300. Forexample, each of the light-emitting devices 300 can include the emittingfunction layer same as adjacent light-emitting device 300. The emittingfunction layer of each light-emitting device 300 can be connected to theemitting function layer of adjacent light-emitting device 300. Forexample, in the display apparatus according to the embodiment of thepresent invention, at least one of the hole injection layer (HIL), thehole transporting layer (HTL), the electron transporting layer (ETL),and the electron injection layer (EIL) can extend onto the bankinsulating layer 160 and the spacer 170 along the second electrode 330.

A gate driver GIP1 and GIP2 can be disposed on the non-display area NAof the device substrate 100. Each of the pixel regions PA can receivethe gate signal from the gate driver GIP1 and GIP2. For example, thegate driver GIP1 and GIP2 can be connected to the display area AA bygate lines GL. The driving circuit D of each pixel region PA can beconnected to one of the gate lines GL. For example, the first gateelectrode 213 of the first thin film transistor 210 of each drivingcircuit D can be connected to the corresponding gate line GL.Accordingly, the first semiconductor pattern 211 containing the oxidesemiconductor of the first thin film transistor 210 can be deterioratedby the hydrogen moving through the gate line GL.

The gate driver GIP1 and GIP2 can include at least one driver thin filmtransistor 500. The driver thin film transistor 500 can have the sameconfiguration as the second thin film transistor 220. For example, thedriver thin film transistor 500 can include a third semiconductorpattern 501, a third gate electrode 503, a third source electrode 505and a third drain electrode 506. A stacked structure of the driver thinfilm transistor 500 can be the same as a stacked structure of the secondthin film transistor 220. For example, the third semiconductor pattern501 can be disposed on the buffer layer 110. The third semiconductorpattern 501 can include the same material as the second semiconductorpattern 221. For example, the third semiconductor pattern 501 caninclude silicon.

The second gate insulating layer 120 can be disposed between the thirdsemiconductor pattern 501 and the third gate electrode 503. The lowerinterlayer insulating layer 130 and the upper interlayer insulatinglayer 140 can be sequentially stacked on the third gate electrode 503.The third source electrode 505 and the third drain electrode 506 can bedisposed on the upper interlayer insulating layer 140. The third gateelectrode 503, the third source electrode 505 and the third drainelectrode 506 can include the same material as the second gate electrode223, the second source electrode 225 and the second drain electrode 226,respectively.

The over-coat layer 150 can extend on the gate driver GIP1 and GIP2. Forexample, a thickness difference due to the driver thin film transistor500 can be removed by the over-coat layer 150. The second electrode 330of each light-emitting device 300 can be disposed in the display areaAA. For example, the over-coat layer 150, the bank insulating layer 160and the encapsulating element 400 can be sequentially stacked on thedriver thin film transistor 500. The bank insulating layer 160 can be indirect contact with the over-coat layer 150 and the encapsulatingelement 400 on the non-display area NA of the device substrate 100.

The gate lines GL can be disposed on the same layer as the first gateelectrode 213 of each driving circuit D. For example, the gate lines GLcan be disposed between the lower interlayer insulating layer 130 andthe upper interlayer insulating layer 140. The gate lines GL can includea conductive material. For example, the gate lines GL can include ametal, such as aluminum (Al), chromium (Cr), titanium (Ti), molybdenum(Mo), tungsten (W) and copper (Cu), or alloys thereof. The gate lines GLcan include the same material as the first gate electrode 213. In thedisplay area AA, as shown in FIG. 2A, an electrode layer, such as asecond electrode 330 and the like, is disposed between the gate line GLand the encapsulating element 400, such that the hydrogen diffused fromthe encapsulating element 400 can be blocked by the electrode layerwithout moving to the gate line GL in the display area AA. As shown inFIG. 2B, the electrode layer, such as a second electrode 330 and thelike, is not disposed in the non-display area AA, such that the gateline GL can be exposed to the encapsulating element 400. In such a case,the hydrogen diffused from the encapsulating element 400 can easily moveto the gate line GL in the non-display area AA, and thus, the oxidesemiconductor pattern in the display area AA can be deteriorated by thehydrogen moving through the gate line GL.

For this reason, a barrier line BL can be disposed between the displayarea AA and the gate driver GIP1 and GIP2. The barrier line BL canintersect the gate lines GL. For example, the barrier line BL can extendalong an edge of the display area AA. The barrier line BL can bedisposed between the gate lines GL and the encapsulating element 400.For example, each of the gate lines GL can include a portion overlappingwith the barrier line BL. The barrier line BL can be disposed close tothe gate lines GL. For example, the barrier line BL can be disposedbetween the upper interlayer insulating layer 140 and the over-coatlayer 150.

The barrier line BL can include a hydrogen barrier material. Thehydrogen barrier material means a material capable of absorbing and/orblocking hydrogen. For example, the hydrogen barrier material caninclude a metal, such as titanium (Ti). Thus, in the display apparatusaccording to the embodiment of the present invention, hydrogen diffusedfrom the encapsulating element 400 toward the gate lines GL can beabsorbed and/or blocked by the barrier line BL. And, in the displayapparatus according to the embodiment of the present invention, hydrogenmoving through the gate lines GL can be captured by the barrier line BL.For example, in the display apparatus according to the embodiment of thepresent invention, hydrogen may not move through the gate lines GL.Therefore, in the display apparatus according to the embodiment of thepresent invention, the reliability deterioration of the driving circuitD due to hydrogen can be prevented.

A pad region PAD can be disposed in the non-display area NA of thedevice substrate 100. The pad area PAD can receive various signals fromthe outside, and apply the signals to the display area AA. For example,the pad region PAD can be connected to the display area AA by data linesDL applying the data signal. The driving circuit D of each pixel regionPA can be connected to one of the data lines DL. For example, the firstsource electrode 215 of each driving circuit D can be electricallyconnected to the corresponding data line DL.

The data lines DL can be disposed on the same layer as the first sourceelectrode 215 of each driving circuit D. For example, the data lines DLcan be disposed on the upper interlayer insulating layer 140. The datalines DL can include a conductive material. For example, the data linesDL can include a metal, such as aluminum (Al), chromium (Cr), titanium(Ti), molybdenum (Mo), tungsten (W) and copper (Cu), or alloys thereof.The data lines DL can include the same material as the first sourceelectrode 215.

The data lines DL can be disposed on the same layer as the barrier lineBL. For example, the date lines DL can be disposed between the upperinterlayer insulating layer 140 and the over-coat layer 150. The datalines DL can include the same material as the barrier line BL. Forexample, the data lines DL can include titanium (Ti). The barrier lineBL can be spaced away from the data lines DL. For example, the barrierline BL can be disposed outside three sides of the display area AAexcept side facing the pad region PAD. Thus, in the display apparatusaccording to the embodiment of the present invention, inflowing hydrogento the display area AA through the gate lines GL can be prevented.

The pad region PAD can be electrically connected to the gate driver GIP1and GIP2. For example, the gate driver GIP1 and GIP2 can receive a clocksignal, a reset clock signal, and a start signal through the pad regionPAD. The pad region PAD can be electrically connected to the gate driverGIP1 and GIP2 by signal lines SL.

Accordingly, the display apparatus according to the embodiment of thepresent invention can include the barrier line BL disposed between theencapsulating element 400 and the gate lines GL connecting the gatedriver GIP1 and GIP2 to the display area AA, wherein the barrier line BLincludes a hydrogen barrier material. Thus, in the display apparatusaccording to the embodiment of the present invention, inflowing hydrogento the display area AA through the gate lines GL can be prevented. Forexample, in the display apparatus according to the embodiment of thepresent invention, deteriorating the oxide semiconductor pattern of eachpixel region PA disposed in the display area AA due to hydrogen diffusedfrom the encapsulating element 400 can be prevented. Therefore, in thedisplay apparatus according to the embodiment of the present invention,the reliability for the driving circuit D of each pixel region PA can beimproved.

The display apparatus according to the embodiment of the presentinvention is described that the display area AA is disposed between twogate driver GIP1 and GIP2. However, the display apparatus according toanother embodiment of the present invention can include a single gatedriver disposed on one side of the display area AA.

The display apparatus according to the embodiment of the presentinvention is described that the barrier line BL has a single layer.However, in the display apparatus according to another embodiment of thepresent invention, the barrier line BL can have a multi-layer structure.For example, in the display apparatus according to another embodiment ofthe present invention, the barrier line BL can have a structure in whicha hydrogen barrier material layer is disposed between conductive layers.The barrier line BL can be formed simultaneously with the data lines DL.Thus, in the display apparatus according to another embodiment of thepresent invention, the function deterioration of the data lines DL canbe prevented, and a process of forming the barrier line BL can besimplified.

In the display apparatus according to another embodiment of the presentinvention, the first source electrode 215, the first drain electrode216, the second source electrode 225 and the second drain electrode 226of each driving circuit D can be formed simultaneously with the barrierline BL. For example, the first source electrode 215, the first drainelectrode 216, the second source electrode 225 and the second drainelectrode 226 of each driving circuit D can have a stacked structuresame as the barrier line BL. Thus, in the display apparatus according toanother embodiment of the present invention, the process efficiency canbe improved, and the reliability deterioration of the driving circuit Ddue to hydrogen can be effectively prevented.

The display apparatus according to the embodiment of the presentinvention is described that the first thin film transistor 210 of eachpixel region PA includes an oxide semiconductor pattern.

However, other examples are possible. FIG. 3 is a view showing thedisplay apparatus according to another embodiment of the presentinvention, FIG. 4A is a view showing cross-sections taken along lineV-V′ and line VI-VI′ of FIG. 3 , and FIG. 4B is a view showingcross-sections taken along line VII-VII′ and line VIII-VIII′ of FIG. 3 .

In the display apparatus according to another embodiment of the presentinvention, a driving circuit D of each pixel region PA can include afirst thin film transistor 610, a second thin film transistor 620 and astorage capacitor 630, and the second thin film transistor 620 of eachpixel region PA connected to the corresponding light-emitting device 300can include a second semiconductor pattern 621 which includes an oxidesemiconductor, as shown in FIGS. 3, 4A and 4B.

The first thin film transistor 610 can be disposed between a devicesubstrate 100 and an intermediate insulating layer 730. For example, afirst semiconductor pattern 611 of the first thin film transistor 610can be disposed between a buffer layer 110 and a first gate insulatinglayer 710, a first gate electrode 613 of the first thin film transistor610 can be disposed between the first gate insulating layer 710 and afirst interlayer insulating layer 720, and a first source electrode 615and a first drain electrode 616 of the first thin film transistor 610can be disposed between the first interlayer insulating layer 720 andthe intermediate insulating layer 730.

Referring to FIG. 4A, the intermediate insulating layer 730 isillustrated as a single layer, but is not limited thereto. For example,the intermediate insulating layer 730 can have a multi-layer structurein which a layer formed of silicon nitride (SiNx) and a layer formed ofsilicon oxide (SiOx) are stacked. The intermediate insulating layer 730can be a double-layer structure of a layer formed of silicon nitride(SiNx) and a layer formed of silicon oxide (SiOx).

The second thin film transistor 620 can be disposed on the storagecapacitor 630. For example, the storage capacitor 630 can be disposedbetween the buffer layer 110 and the intermediate insulating layer 730.A first capacitor electrode 631 and a second capacitor electrode 632 ofthe storage capacitor 630 can include a metal. For example, the firstcapacitor electrode 631 can include the same material as the first gateelectrode 613. The first capacitor electrode 631 can be disposed betweenthe first gate insulating layer 710 and the first interlayer insulatinglayer 720. For example, the second capacitor electrode 632 can includethe same material as the first source electrode 615 and the first drainelectrode 616. The second capacitor electrode 632 can be disposedbetween the first interlayer insulating layer 720 and the intermediateinsulating layer 730.

A second drain electrode 626 of the second thin film transistor 620 canbe connected to the storage capacitor 630. For example, the intermediateinsulating layer 730 can include a capacitor contact hole partiallyexposing the second capacitor electrode 632. The second drain electrode626 can be in direct contact with the second capacitor electrode 632 inthe capacitor contact hole.

A second interlayer insulating layer 740 can be disposed on a secondgate electrode 623 of the second thin film transistor 620. Anintermediate source electrode 645 and an intermediate drain electrode646 can be disposed on the second interlayer insulating layer 740. Theintermediate source electrode 645 can be connected to the first sourceelectrode 615. The intermediate drain electrode 646 can be connected tothe first drain electrode 616. The intermediate source electrode 645 andthe intermediate drain electrode 646 can be disposed on the same layeras the second drain electrode 626. For example, the intermediate sourceelectrode 645 and the intermediate drain electrode 646 can be formedsimultaneously with the second source electrode 625 and the second drainelectrode 626 of the second thin film transistor 620. Thus, in thedisplay apparatus according to another embodiment of the presentinvention, the characteristics deterioration of the driving circuit Ddue to the introduction of hydrogen can be prevented regardless of theconfiguration of the driving circuit D of each pixel area PA.

Referring to FIG. 4A, the second interlayer insulating layer 740 isillustrated as a single layer, but is not limited thereto. For example,the second interlayer insulating layer 740 can have a multi-layerstructure in which a layer formed of silicon nitride (SiNx) and a layerformed of silicon oxide (SiOx) are stacked. The second interlayerinsulating layer 740 can be a double-layer structure of a layer formedof silicon nitride (SiNx) and a layer formed of silicon oxide (SiOx).

In the display apparatus according to another embodiment of the presentinvention, the gate driver GIP1 and GIP2 can include an oxidesemiconductor pattern. For example, in the display apparatus accordingto another embodiment of the present invention, a driver thin filmtransistor 800 of the gate driver GIP1 and GIP2 can be disposed on theintermediate insulating layer 730. The driver thin film transistor 800can have the same configuration as the second thin film transistor 620.For example, a third semiconductor pattern 801 of the driver thin filmtransistor 800 can include the same material as the second semiconductorpattern 621. Thus, in the display apparatus according to anotherembodiment of the present invention, the characteristics deteriorationof the gate driver GIP1 and GIP2 can be prevented by to the barrier lineBL. Therefore, in the display apparatus according to another embodimentof the present invention, the degree of freedom for the configuration ofthe gate driver GIP1 and GIP2 can be improved.

In the display apparatus according to another embodiment of the presentinvention, the barrier line BL can intersect the data lines DL. Thebarrier line BL can be disposed on a layer different from the data linesDL. For example, in the display apparatus according to anotherembodiment of the present invention, a first over-coat layer 750 and asecond over-coat layer 760 can be sequentially stacked on the drivingcircuit D, a connection electrode 650 can be disposed between the firstover-coat layer 750 and the second over-coat layer 760, the firstelectrode 310 of the light-emitting device 300 can be connected to thesecond drain electrode 626 via the connection electrode 650, and thebarrier line BL can be disposed on the same layer as the connectionelectrode 650. The connection electrode 650 can include a hydrogenbarrier material. For example, the connection electrode 650 can have amulti-layer structure including a conductive layer formed of titanium(Ti). The data lines DL can include a material different from thebarrier line BL. Thus, in the display apparatus according to anotherembodiment of the present invention, the degree of freedom for thematerial of the gate lines GL and the data lines DL can be improved.

The first over-coat layer 750 and the second over-coat layer 760 caninclude an organic material. For example, the first over-coat layer 750and the second over-coat layer 760 can include at least one of acrylresin, epoxy resin, phenolic resin, polyamide resin and polyimide resin.

Referring to FIG. 4A, it is illustrated that the connection electrode650 is connected to the second thin film transistor 620, but is notlimited thereto. For example, the connection electrode 650 can beconnected to the first thin film transistor 610. The connectionelectrode 650 can be connected to the first drain electrode 616 or thefirst source electrode 615 of the first thin film transistor 610 in aconnecting contact hole formed in the first over-coat layer 750. Thus,the connection electrode 650 can connect the first electrode 310 of thelight-emitting device 300 to the first thin film transistor 610.

The display apparatus according to the embodiment of the presentinvention is described that the barrier line BL is insulated from thedisplay area AA, the gate driver GIP1 and GIP2, and the pad region PAD.

However, other examples are possible. FIGS. 5 to 7 are viewsrespectively showing the display apparatus according to anotherembodiment of the present invention. FIGS. 8 and 9 are enlarged views ofK region in FIG. 7 .

In the display apparatus according to another embodiment of the presentinvention, a specific voltage can be applied to the barrier line BL. Forexample, in the display apparatus according to another embodiment of thepresent invention, the barrier line BL can be connected to the padregion PAD, as shown in FIG. 5 . Thus, in the display apparatusaccording to another embodiment of the present invention, one of thepositive power voltage VDD, the negative power voltage VSS, and the gatesignal voltage Vgl can be applied to the barrier line BL. Thus, in thedisplay apparatus according to another embodiment of the presentinvention, the blocking and the capturing of hydrogen by the barrierline BL can be effectively performed.

The display apparatus according to the embodiment of the presentinvention is described that the barrier line BL is a single line.However, in the display apparatus according to another embodiment of thepresent invention, the barrier lines BL can be composed of multiplelines. For example, in the display apparatus according to anotherembodiment of the present invention, the barrier line BL can include afirst conductive line L1 and a second conductive line L2 disposed sideby side with the first conductive line L1, as shown in FIG. 6 . Thefirst conductive line L1 can be disposed between the second conductiveline L2 and the gate driver GIP1 and GIP2. For example, the secondconductive line L2 can extend parallel with the first conductive lineL1. Thus, in the display apparatus according to another embodiment ofthe present invention, the blocking of hydrogen by the barrier line BLcan be effectively performed.

The display apparatus according to the embodiment of the presentinvention is described that the display area AA has a rectangular shape.However, in the display apparatus according to another embodiment of thepresent invention, a distance between the display area AA and the gatedriver GIP1 and GIP2 can be changed depending on the location.

For example, in the display apparatus according to another embodiment ofthe present invention, a corner of the display area AA can have a roundshape, as shown in FIGS. 7 and 8 . Around the corner of the display areaAA, a length of each gate line GL exposed to the encapsulation element400 can be increased. The barrier line BL can have a relatively largerwidth near the corner of the display area AA. For example, the barrierline BL can include a first region having a first width W1 and a secondregion having a second width W2 larger than the first width W1, and thesecond region of the barrier line BL can be disposed on a regioncorresponding to the corner of the display area AA. For example, in thedisplay apparatus according to another embodiment of the presentinvention, the width of the barrier line BL can be changed according toa relatively length of the gate lines GL exposed to the encapsulatingelement 400. Thus, in the display apparatus according to anotherembodiment of the present invention, the blocking of hydrogen by thebarrier line BL can be effectively performed. Therefore, in the displayapparatus according to another embodiment of the present invention, thereliability of the driving circuit D of each pixel region can beimproved regardless of the shape of the display area AA.

In the display apparatus according to another embodiment of the presentinvention, a distance between the display area AA and the barrier lineBL can be constant. For example, in the display apparatus according toanother embodiment of the present invention, the display area AA canhave a rounded corner, and a side of the barrier line BL toward thedisplay area AA can have a shape corresponding to the rounded corner ofthe display area AA, as shown in FIG. 9 . For example, in the displayapparatus according to another embodiment of the present invention, afirst distance d1 between the barrier line BL and the display area AA ata side of the display area AA can be the same as a second distance d2between the barrier line BL and the display area AA at a corner of thedisplay area AA. Thus, in the display apparatus according to anotherembodiment of the present invention, the deviation of hydrogen blockingby the barrier line BL can be prevented or minimized.

Therefore, in the display apparatus according to another embodiment ofthe present invention, the characteristics deviation of the thin filmtransistors due to the introduction of hydrogen can be prevented orminimized.

As a result, the display apparatus according to one or more embodimentsof the present invention can include the barrier line between the gatelines and the encapsulating element, wherein the barrier line includes ahydrogen barrier material. Thus, in the display apparatus according toone or more embodiments of the present invention, the gate lines may notserve as a moving path of hydrogen.

Further, in the display apparatus according to the embodiments of thepresent invention, the reliability of the thin film transistorsincluding an oxide semiconductor pattern and the driving circuit havingthe same can be improved.

What is claimed is:
 1. A display apparatus comprising: pixel regions,each of the pixel regions including a driving circuit and alight-emitting device connected to the driving circuit, the drivingcircuit including an oxide semiconductor pattern; a gate driver disposedoutside the pixel regions and connected to each pixel region by gatelines; an encapsulating element overlapping with the gate lines; and afirst barrier line between the gate lines and the encapsulating element,the first barrier line intersecting the gate lines, wherein the firstbarrier line includes a hydrogen barrier material.
 2. The displayapparatus according to claim 1, wherein the hydrogen barrier materialincludes titanium (Ti).
 3. The display apparatus according to claim 1,wherein the first barrier line is disposed between the pixel regions andthe gate driver.
 4. The display apparatus according to claim 1, whereinin each pixel region, the light-emitting device is disposed between theoxide semiconductor pattern and the encapsulating element.
 5. Thedisplay apparatus according to claim 1, further comprising a pad regiondisposed outside the pixel regions, wherein the pad region is connectedto each pixel region by data lines, and wherein the data lines include asame material as the first barrier line.
 6. The display apparatusaccording to claim 5, wherein the first barrier line is spaced away fromthe data lines.
 7. The display apparatus according to claim 1, furthercomprising a second barrier line disposed between the first barrier lineand the gate driver.
 8. The display apparatus according to claim 7,wherein the second barrier line extends side by side with the firstbarrier line.
 9. The display apparatus according to claim 1, furthercomprising a pad region disposed outside the pixel regions, wherein thepad region is connected to each pixel region by data lines, and whereinthe first barrier line is connected to the pad region.
 10. The displayapparatus according to claim 1, wherein the driving circuit includes agate electrode overlapping with a channel region of the oxidesemiconductor pattern, and wherein the gate electrode is connected toone of the gate lines.
 11. The display apparatus according to claim 10,wherein the driving circuit further includes: a gate insulating layerdisposed between the oxide semiconductor pattern and the gate electrode,a source electrode connected to a source region of the oxidesemiconductor pattern, and a drain electrode connected to a drain regionof the oxide semiconductor pattern, and wherein the source electrode andthe drain electrode are disposed on a same layer as the first barrierlayer.
 12. A display apparatus comprising: a device substrate includinga display area and a non-display area disposed outside the display area;a gate driver disposed on the non-display area of the device substrate,and connected to the display area by gate lines; a barrier lineintersecting the gate lines, and including a hydrogen barrier material;and an encapsulating element covering the gate lines, wherein thebarrier line is disposed between the gate lines and the encapsulatingelement.
 13. The display apparatus according to claim 12, furthercomprising driving circuits on the display area of the device substrate,wherein each of the driving circuits includes a thin film transistorconnected to one of the gate lines, and wherein the thin film transistorincludes an oxide semiconductor pattern.
 14. The display apparatusaccording to claim 12, further comprising a pad region disposed on thenon-display area of the device substrate and connected to the displayarea by data lines, wherein a stacked structure of each of the datalines includes at least one layer formed as a same material as thebarrier line.
 15. The display apparatus according to claim 14, whereinthe stacked structure of each of the data lines is different from astacked structure of the barrier line.
 16. The display apparatusaccording to claim 12, wherein the barrier line is disposed between thedisplay area and the gate driver along an edge of the display area. 17.The display apparatus according to claim 16, wherein the barrier linehas a closed loop shape extending along the edge of the display area.18. The display apparatus according to claim 12, wherein the barrierline includes: a first region having a first width, and a second regionhaving a second width larger than the first width of the first region,wherein a corner of the display area has a round shape, and wherein thesecond region of the barrier line corresponds to the corner of thedisplay area.
 19. The display apparatus according to claim 18, wherein adistance between the barrier line and the display area is constant. 20.The display apparatus according to claim 12, wherein hydrogen diffusedfrom the encapsulating element toward the gate lines is absorbed and/orblocked by the barrier line.